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0.01 0.1 1.0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) fig. 2 typical forward characteristics f t = 25 c pulse width = 300 s j m 10 20 30 0 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fig. 3 peak forward surge current pulse width 8.3 ms single half-sine-wave (jedec method) 50v dc approx 50 ni (non-inductive) w 10 ni w 1.0 ni w oscilloscope (note 1) pulse generator (note 2) device under test t rr se t tim e bas e fo r 5 /10 ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . w w fig. 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) 1 0 10 0 100 0 1 1 0 100 c , capacitance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r sf 11 - sf 1 4 sf 15 - sf 1 7 t = 25 c f = 1.0mhz j 0 0.25 0.50 0.75 1.00 02550 75 100 125 150 175 i , average fwd rectified current (a) (av) t , ambient temperature ( c ) fig. 1 forward current derating curve a single phase half wave resistive or inductive load sf 11 - sf 1 4 sf 1 5 - sf 1 6 sf 1 7
? 221 west industry court deer park, ny 11729-4681 (631) 586-7600 fax (631) 242-9798 ? ? world wide web - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron semiconductor technical data disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change wi thout prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices t hat feature assured safety o r by means of users? fail-safe prec autions or other arrangement. 3- in no event shall sensitron semiconducto r be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datasheet(s). sensitron semiconducto r assumes no responsibility for any intellec tual property claims or any other problems that may result from applications of informatio n, products or circuits described in the d atasheets. 4- in no event shall sensitron semiconduc tor be liable for any failure in a semic onductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any form , in whole or part, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws a nd regulations.

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